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Search for "3D growth" in Full Text gives 13 result(s) in Beilstein Journal of Nanotechnology.

Prediction of Co and Ru nanocluster morphology on 2D MoS2 from interaction energies

  • Cara-Lena Nies and
  • Michael Nolan

Beilstein J. Nanotechnol. 2021, 12, 704–724, doi:10.3762/bjnano.12.56

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  • of surface to bulk is of great importance in promoting catalytic activity. Therefore, 3D growth (agglomeration) is essential when creating a supported metal catalyst [44][45][46][47]. In this work we aim to determine the atomic-scale interactions that control the stability of small Con and Run
  • there are two useful descriptors for 2D-vs-3D growth [48]: (1) If the metal–substrate interaction is more favourable than the metal–metal interaction, then 2D growth is preferred; and (2) if the total binding energy is more favourable than the cohesive energy of the bulk metal, then 2D growth is
  • geometries are given in section S1.1.2 of Supporting Information File 1. Discussion Comparing the contributions of metal–metal and metal–substrate interaction energies to the total binding energy is an important way of determining a preference towards 2D or 3D growth. With this particular system it is also
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Published 14 Jul 2021

Influence of electrospray deposition on C60 molecular assemblies

  • Antoine Hinaut,
  • Sebastian Scherb,
  • Sara Freund,
  • Zhao Liu,
  • Thilo Glatzel and
  • Ernst Meyer

Beilstein J. Nanotechnol. 2021, 12, 552–558, doi:10.3762/bjnano.12.45

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  • TE (12000 nm2). Their height distribution is enlarged compared to islands formed after TE, suggesting a growth mechanism that favors a 3D growth over layer-by-layer growth. A few profiles acquired on C60 islands in Figure 3c are shown in Figure 3f and compared to the profile acquired on the small
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Published 15 Jun 2021

Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES

  • Markus Tautz,
  • Maren T. Kuchenbrod,
  • Joachim Hertkorn,
  • Robert Weinberger,
  • Martin Welzel,
  • Arno Pfitzner and
  • David Díaz Díaz

Beilstein J. Nanotechnol. 2020, 11, 41–50, doi:10.3762/bjnano.11.4

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  • and K700 tools. Epitaxy stacks A–E were prepared with different layer stacks (Figure 1). A acts as a reference sample in the following discussion. Usually 3D growth was applied in the layer closest to the substrate. We chose 2D growth to reach a high initial dislocation density and gain maximum
  • variation in dislocation density. The bottommost 2D GaN layer was increased in thickness from 300 nm (A) to 1000 nm (B). A change to 3D growth conditions was applied to reduce defects caused by bending of dislocations into lateral direction. It is well known that 3D growth can be initiated by various growth
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Published 03 Jan 2020

Uniform Sb2S3 optical coatings by chemical spray method

  • Jako S. Eensalu,
  • Atanas Katerski,
  • Erki Kärber,
  • Ilona Oja Acik,
  • Arvo Mere and
  • Malle Krunks

Beilstein J. Nanotechnol. 2019, 10, 198–210, doi:10.3762/bjnano.10.18

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  • met. Indeed, metastibnite, the naturally occurring mineral form of amorphous Sb2S3, has the botryoidal characteristic, preferentially forming globular clusters [55]. We have also observed 3D growth of extremely thin TiO2 layers by spray pyrolysis [56]. Therefore, 3D island growth may partially be
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Published 15 Jan 2019

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

  • Alexander S. Pashchenko,
  • Leonid S. Lunin,
  • Eleonora M. Danilina and
  • Sergei N. Chebotarev

Beilstein J. Nanotechnol. 2018, 9, 2794–2801, doi:10.3762/bjnano.9.261

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  • 3D growth but has some limitations for a number of functional applications such as manipulating the photosensitivity spectrum in the infrared region. The solution to the problem can be found by the selection of a potential-barrier material for QDs based on III–V multicomponent solid solutions. GaAsSb
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Published 02 Nov 2018

Pattern generation for direct-write three-dimensional nanoscale structures via focused electron beam induced deposition

  • Lukas Keller and
  • Michael Huth

Beilstein J. Nanotechnol. 2018, 9, 2581–2598, doi:10.3762/bjnano.9.240

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  • correctly at all. 3.4 Deposits with increased complexity As a demonstration of the capability of the pattern file generator for more complex 3D growth, we show in Figure 11 a Co3Fe edge array according to a diamond lattice structure with relevance for studying frustrated magnetic interactions in 3D lattices
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Published 27 Sep 2018
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  • lateral dimensions for CMPS nanodots, the growth was directed in the vertical direction to create taller nanostructures. However, the nanodot structures became taller and wider after reaction with H2TPyP to form heterostructures. This indicates that 3D growth takes place in the nanostructure assembly
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Published 17 Apr 2018

Electron interactions with the heteronuclear carbonyl precursor H2FeRu3(CO)13 and comparison with HFeCo3(CO)12: from fundamental gas phase and surface science studies to focused electron beam induced deposition

  • Ragesh Kumar T P,
  • Paul Weirich,
  • Lukas Hrachowina,
  • Marc Hanefeld,
  • Ragnar Bjornsson,
  • Helgi Rafn Hrodmarsson,
  • Sven Barth,
  • D. Howard Fairbrother,
  • Michael Huth and
  • Oddur Ingólfsson

Beilstein J. Nanotechnol. 2018, 9, 555–579, doi:10.3762/bjnano.9.53

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  • vapor pressure. For instance, Fe(CO)5, [51][52] Fe2(CO)9 [53][54] and Co2(CO)8 [55] have been shown to yield deposits with high metal content (>60 atom %). In addition, high resolution FEBID of metal nanostructures below 30 nm [56] and successful 3D growth [57] has been demonstrated; however
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Published 14 Feb 2018

Comprehensive Raman study of epitaxial silicene-related phases on Ag(111)

  • Dmytro Solonenko,
  • Ovidiu D. Gordan,
  • Guy Le Lay,
  • Dietrich R. T. Zahn and
  • Patrick Vogt

Beilstein J. Nanotechnol. 2017, 8, 1357–1365, doi:10.3762/bjnano.8.137

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  • -energy shoulder. The formation of such crystallites is clearly temperature-dependent. Solely 3D growth is observed when the temperature reaches 300 °C, i.e., the limit of the 2D Si-layer growth mode on Ag(111). The Raman and AFM results confirm the co-existence of Si crystallites and of the “” structure
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Published 03 Jul 2017

3D Nanoprinting via laser-assisted electron beam induced deposition: growth kinetics, enhanced purity, and electrical resistivity

  • Brett B. Lewis,
  • Robert Winkler,
  • Xiahan Sang,
  • Pushpa R. Pudasaini,
  • Michael G. Stanford,
  • Harald Plank,
  • Raymond R. Unocic,
  • Jason D. Fowlkes and
  • Philip D. Rack

Beilstein J. Nanotechnol. 2017, 8, 801–812, doi:10.3762/bjnano.8.83

Graphical Abstract
  • of 3D growth have been demonstrated [35][36][37][38] beyond simple 1D nanowires, controlled growth of complex geometries using EBID has only recently been achieved based on a combined simulation and computer aided design approach [11]. This approach has also been used with Ga+ ion beam induced
  • dealt with the deposition of 2D pads and a simple pillar structure. The primary thrust of this current work illuminates the non-trivial aspects of transferring the laser-assisted purification process to the complex 3D growth. Specifically, the coupled relationship between vertical and lateral growth is
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Published 07 Apr 2017

Obtaining and doping of InAs-QD/GaAs(001) nanostructures by ion beam sputtering

  • Sergei N. Chebotarev,
  • Alexander S. Pashchenko,
  • Leonid S. Lunin,
  • Elena N. Zhivotova,
  • Georgy A. Erimeev and
  • Marina L. Lunina

Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2

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  • barrier layer increases the intensity of photoluminescence peaks of the ground state and the first excited state of the InAs quantum dots. Keywords: 3D growth; doping; ion-beam sputtering; photoluminescence; quantum dots; Introduction Main interests of inorganic nanotechnology science are the study of
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Published 03 Jan 2017

Two step formation of metal aggregates by surface X-ray radiolysis under Langmuir monolayers: 2D followed by 3D growth

  • Smita Mukherjee,
  • Marie-Claude Fauré,
  • Michel Goldmann and
  • Philippe Fontaine

Beilstein J. Nanotechnol. 2015, 6, 2406–2411, doi:10.3762/bjnano.6.247

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Published 15 Dec 2015

Distribution of Pd clusters on ultrathin, epitaxial TiOx films on Pt3Ti(111)

  • Christian Breinlich,
  • Maria Buchholz,
  • Marco Moors,
  • Tobias Pertram,
  • Conrad Becker and
  • Klaus Wandelt

Beilstein J. Nanotechnol. 2015, 6, 2007–2014, doi:10.3762/bjnano.6.204

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  • clusters are now 1 to 4 Pd layers thick and thus indicates that 3D growth has started. The imaged mean diameter increased to 5.5 nm with a broader size distribution of ±2.9 nm (Figure 3d). From the energetic point of view, a precondition for 3D growth (i.e., nonwetting), is that the adhesion energy of the
  • Pd metal on the oxide is smaller than twice the surface free energy of the vacuum–metal interface of the liquid metal [19]. In the case of late transition metals on oxides, this criterion is usually met, and thus 3D growth is observed in most cases [14]. From a kinetic point of view, the growth
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Published 09 Oct 2015
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